Manufacturer Part Number
IXFH15N80Q
Manufacturer
IXYS Corporation
Introduction
The IXFH15N80Q is a high-performance, N-channel MOSFET transistor from IXYS Corporation. It is part of the HiPerFET, Q Class series and features a TO-247-3 package with a through-hole mounting type.
Product Features and Performance
Drain to Source Voltage (Vdss): 800 V
Maximum Gate-Source Voltage (Vgs): ±20 V
Maximum On-State Resistance (Rds(on)): 600 mΩ @ 7.5 A, 10 V
Continuous Drain Current (Id): 15 A @ 25°C (Tc)
Input Capacitance (Ciss): 4300 pF @ 25 V
Maximum Power Dissipation: 300 W @ 25°C (Tc)
Operating Temperature Range: -55°C to 150°C (TJ)
Product Advantages
High voltage and current handling capabilities
Low on-state resistance for efficient power conversion
Suitable for a wide range of power electronics applications
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
Gate Threshold Voltage (Vgs(th)): 4.5 V @ 4 mA
Gate Charge (Qg): 90 nC @ 10 V
Drive Voltage Range: 10 V
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature and harsh environment applications
Compatibility
Compatible with a variety of power electronics circuits and systems
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial power electronics
Renewable energy systems
Product Lifecycle
This product is actively available and not nearing discontinuation. Replacement or upgrade options may be available from IXYS Corporation or other vendors.
Key Reasons to Choose This Product
Excellent voltage and current handling capabilities
Low on-state resistance for high efficiency
Suitable for a wide range of power electronics applications
Robust design for reliable performance in harsh environments
RoHS3 compliance for environmental sustainability
