Manufacturer Part Number
IXFH15N100
Manufacturer
IXYS Corporation
Introduction
High-performance MOSFET transistor with enhanced performance and efficiency.
Product Features and Performance
N-channel MOSFET design
High drain-source voltage of 1000V
Low on-resistance of 700mOhm
High continuous drain current of 15A
Wide operating temperature range of -55°C to 150°C
High input capacitance of 4500pF
High power dissipation of 360W
Product Advantages
Excellent high-voltage and high-current handling capability
Efficient power conversion with low on-resistance
Wide temperature tolerance for diverse applications
Compact TO-247-3 package for easy integration
Key Technical Parameters
Drain-Source Voltage (Vdss): 1000V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 700mOhm
Continuous Drain Current (Id): 15A
Input Capacitance (Ciss): 4500pF
Power Dissipation (Tc): 360W
Quality and Safety Features
Robust MOSFET design for reliable performance
Tested and qualified to industry standards
Suitable for high-voltage, high-current applications
Compatibility
Compatible with a wide range of electrical systems and circuits
Suitable for use in various power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial control systems
Product Lifecycle
Current production model
Replacement and upgrade options available
Key Reasons to Choose This Product
Exceptional high-voltage and high-current handling capabilities
Efficient power conversion with low on-resistance
Wide operating temperature range for diverse applications
Compact and easy-to-integrate package
Reliable and robust MOSFET design
Suitable for various power conversion and control applications
