Manufacturer Part Number
IXFH15N100Q3
Manufacturer
IXYS Corporation
Introduction
High-power N-channel MOSFET transistor with advanced HiPerFET MOSFET technology from IXYS.
Product Features and Performance
High voltage rating of 1000V
Continuous drain current of 15A at 25°C
Low on-state resistance of 1.05Ω at 7.5A, 10V
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 64nC at 10V
High power dissipation capability of 690W
Product Advantages
Reliable and efficient high-voltage power switching
Suitable for a wide range of power electronics applications
Compact and easy-to-mount TO-247 package
Key Technical Parameters
Drain-Source Voltage (Vdss): 1000V
Gate-Source Voltage (Vgs): ±30V
On-State Resistance (Rds(on)): 1.05Ω
Drain Current (Id): 15A
Input Capacitance (Ciss): 3250pF
Power Dissipation (Tc): 690W
Quality and Safety Features
ROHS3 compliant
Designed and manufactured to high-quality standards
Compatibility
This MOSFET is compatible with a wide range of power electronics circuits and can be used as a replacement or upgrade for similar high-voltage, high-power switching applications.
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Renewable energy systems
Product Lifecycle
The IXFH15N100Q3 is an active and readily available product from IXYS Corporation. There are no plans for discontinuation, and replacement or upgrade options are available if needed.
Key Reasons to Choose This Product
High voltage and current handling capabilities for reliable power switching
Low on-state resistance for efficient power conversion
Wide operating temperature range for versatile applications
Fast switching speed and low gate charge for high-frequency operation
Compact and easy-to-mount TO-247 package for convenient installation
Proven reliability and quality from a reputable manufacturer, IXYS Corporation
