Manufacturer Part Number
MRF8S21200HR6
Manufacturer
Freescale Semiconductor, Inc. (NXP Semiconductors)
Introduction
High-performance radio frequency (RF) LDMOS transistor for 2.14 GHz wireless infrastructure applications.
Product Features and Performance
Robust LDMOS technology
High efficiency and power density
Optimized for 2.14 GHz operation
Excellent linearity and gain
Reliable and stable performance
Product Advantages
Suitable for 2.14 GHz base station and repeater applications
Efficient RF power amplifier design
Robust and reliable operation
Compact and space-saving package
Key Technical Parameters
Power Output: 48W
Drain Current: 1.4A
Drain Voltage: 65V
Gain: 18.1dB
Frequency: 2.14GHz
Quality and Safety Features
RoHS3 compliant
Reliable NI-1230 package
Compatibility
Compatible with various 2.14 GHz wireless infrastructure systems.
Application Areas
14 GHz base stations and repeaters
Wireless communication equipment
RF power amplifier designs
Product Lifecycle
This product is currently in production and not nearing discontinuation. Replacement and upgrade options are available.
Key Reasons to Choose
Excellent RF performance at 2.14 GHz
Robust and reliable LDMOS technology
Efficient and compact design
RoHS3 compliance for environmental regulations
Availability of replacement and upgrade options