Manufacturer Part Number
MRF8S21200HR6
Manufacturer
NXP Semiconductors
Introduction
This is an RF power MOSFET transistor designed for use in various RF power applications.
Product Features and Performance
Dual LDMOS transistor configuration
Optimized for 2.14 GHz operation
High power output of 48W
Gain of 18.1 dB
Operating voltage up to 65V
Test current of 1.4A
Tested at 28V
Product Advantages
High power and efficiency
Reliable LDMOS technology
Suitable for 2.14 GHz applications
Compact NI-1230 packaging
Key Technical Parameters
Manufacturer Part Number: MRF8S21200HR6
Package: NI-1230, Tape & Reel
Technology: LDMOS
Power Output: 48W
Current (Test): 1.4A
Voltage (Rated): 65V
Gain: 18.1dB
Voltage (Test): 28V
Frequency: 2.14GHz
Mounting Type: Chassis Mount
Quality and Safety Features
RoHS3 compliant
Reliable NXP manufacturing quality
Compatibility
This RF power MOSFET is suitable for use in various RF power amplifier applications operating at 2.14 GHz.
Application Areas
Cellular base stations
Broadcast transmitters
Radar systems
Wireless infrastructure equipment
Product Lifecycle
This product is currently in active production and availability. No plans for discontinuation have been announced.
Key Reasons to Choose This Product
High power output of 48W
Efficient LDMOS technology
Optimized for 2.14 GHz operation
Reliable NXP manufacturing quality
Compact and robust NI-1230 packaging
RoHS3 compliance for environmental sustainability
