Manufacturer Part Number
MRF8S21100HSR3
Manufacturer
Freescale Semiconductor, Inc. (NXP Semiconductors)
Introduction
This product is a high-power LDMOS transistor designed for use in RF power amplifier applications.
Product Features and Performance
Output power: 24W
Gain: 18.3dB
Operating frequency range: 2.11GHz to 2.17GHz
Rated voltage: 65V
Test voltage: 28V
Test current: 700mA
Current rating: 10A
Robust LDMOS technology
Product Advantages
High power output
Excellent gain
Wide operating frequency range
Reliable LDMOS design
Key Technical Parameters
Technology: LDMOS
Package: NI-780S
RoHS compliance: RoHS3 Compliant
Quality and Safety Features
Robust and reliable design
Compliance with RoHS3 standards
Compatibility
This transistor is suitable for use in a variety of RF power amplifier applications.
Application Areas
Cellular base stations
Broadcast transmitters
Radar systems
Satellite communications
Product Lifecycle
This product is currently in production and available from the manufacturer. No information on discontinuation or replacements is provided.
Key Reasons to Choose This Product
High power output capability
Excellent gain performance
Wide operating frequency range
Reliable LDMOS technology
RoHS3 compliance for environmental safety