Manufacturer Part Number
MRF7S19120NR1
Manufacturer
Freescale Semiconductor, Inc. (NXP Semiconductors)
Introduction
High-power RF LDMOS transistor for cellular and wireless infrastructure applications
Product Features and Performance
High power and efficiency
Optimized for 1.99 GHz operation
Excellent linearity and gain
Robust and reliable design
Product Advantages
Efficient power conversion
Compact and space-saving design
Reliable performance in harsh environments
Key Technical Parameters
Power Output: 36W
Current (Test): 1.2A
Voltage (Rated): 65V
Gain: 18dB
Voltage (Test): 28V
Frequency: 1.99GHz
Quality and Safety Features
RoHS3 compliant
Robust TO-270 package design
Compatibility
Suitable for cellular and wireless infrastructure applications
Application Areas
Cellular base stations
Wireless communication systems
Broadcast transmitters
Product Lifecycle
Current production model
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
High power and efficiency for optimal performance
Excellent linearity and gain for improved signal quality
Reliable and robust design for harsh operating environments
Space-saving package for compact system integration
RoHS compliance for environmental responsibility
