Manufacturer Part Number
MRF7S19100NR1
Manufacturer
NXP Semiconductors
Introduction
High-performance RF MOSFET transistor designed for wireless infrastructure applications
Product Features and Performance
High-power RF LDMOS transistor
Operates in the 1.93GHz to 1.99GHz frequency range
Capable of 29W of output power
Gain of 17.5dB
Operates at 28V and 1A
Product Advantages
Suitable for wireless infrastructure applications
Excellent power and gain characteristics
Compact TO-270 package
Key Technical Parameters
Manufacturer Part Number: MRF7S19100NR1
Transistor Type: RF MOSFET
Technology: LDMOS
Frequency Range: 1.93GHz to 1.99GHz
Output Power: 29W
Gain: 17.5dB
Voltage Rating: 65V
Current Rating: 1A
Quality and Safety Features
RoHS3 compliant
Packaged in a reliable TO-270 surface mount package
Compatibility
Designed for wireless infrastructure applications
Application Areas
Wireless base stations
RF power amplifiers
Wireless communications equipment
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available from NXP Semiconductors
Key Reasons to Choose This Product
High-performance RF power transistor
Excellent power and gain characteristics
Compact and reliable surface mount package
Suitable for wireless infrastructure applications
RoHS3 compliant for environmental responsibility
