Manufacturer Part Number
MRF7S19120NR1
Manufacturer
NXP Semiconductors
Introduction
The MRF7S19120NR1 is a high-performance radio frequency (RF) MOSFET transistor designed for use in various RF power amplifier applications.
Product Features and Performance
36W output power
18dB gain
Operates at a frequency of 1.99GHz
Rated for 65V and 1.2A current
Utilizes LDMOS technology
Product Advantages
Excellent power handling and efficiency
High gain and bandwidth for improved performance
Robust and reliable design for demanding applications
Suitable for surface mount assembly
Key Technical Parameters
Power Output: 36W
Current (Test): 1.2A
Voltage (Rated): 65V
Gain: 18dB
Voltage (Test): 28V
Frequency: 1.99GHz
Quality and Safety Features
RoHS3 compliant
Housed in a TO-270 package
Compatibility
Suitable for various RF power amplifier applications
Application Areas
Wireless infrastructure
Broadcast equipment
Industrial RF applications
Product Lifecycle
Currently in production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High-performance RF power handling capabilities
Efficient and reliable LDMOS technology
Suitable for surface mount assembly
Complies with RoHS regulations for environmental safety
