Manufacturer Part Number
PMV50EPEAR
Manufacturer
NXP Semiconductors
Introduction
The PMV50EPEAR is a P-channel power MOSFET transistor suitable for a wide range of power switching and control applications.
Product Features and Performance
30V drain-to-source voltage
45mΩ maximum on-resistance at 4.2A drain current
793pF maximum input capacitance
310mW maximum power dissipation at Ta, 455mW at Tc
Operable over a wide temperature range of -55°C to 150°C
Product Advantages
Low on-resistance for improved efficiency
Compact SOT-23 surface mount package
Wide operating temperature range
Suitable for power switching and control applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 45mΩ @ 4.2A, 10V
Continuous Drain Current (Id): 4.2A @ 25°C
Input Capacitance (Ciss): 793pF @ 15V
Power Dissipation: 310mW (Ta), 455mW (Tc)
Quality and Safety Features
MOSFET technology provides reliable performance
Suitable for a wide range of operating temperatures
Compatibility
The PMV50EPEAR is a direct replacement for many similar P-channel power MOSFET transistors in surface mount packages.
Application Areas
Power switching and control applications
Motor control
Power supplies
Lighting control
Battery management systems
Product Lifecycle
The PMV50EPEAR is an active and widely available product from NXP Semiconductors.
Replacement and upgrade options are readily available from NXP and other manufacturers.
Key Reasons to Choose This Product
Low on-resistance for improved efficiency
Compact surface mount package
Wide operating temperature range
Reliable MOSFET technology
Widely compatible with many similar applications
