Manufacturer Part Number
PMV48XP, 215
Manufacturer
NXP Semiconductors
Introduction
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Product Features and Performance
TO-236AB package
TO-236-3, SC-59, SOT-23-3 package
Operating temperature: -55°C to 150°C (TJ)
Drain to Source Voltage (Vdss): 20V
Vgs (Max): ±12V
Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V
MOSFET (Metal Oxide) technology
Continuous Drain Current (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10V
Power Dissipation (Max): 510mW (Ta)
P-Channel FET type
Vgs(th) (Max) @ Id: 1.25V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5V
Surface Mount Mounting Type
Product Advantages
Compact TO-236AB package
Wide operating temperature range
Low on-resistance
High current capability
Low input capacitance
High power dissipation
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Vgs (Max): ±12V
Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V
Continuous Drain Current (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10V
Power Dissipation (Max): 510mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5V
Quality and Safety Features
Robust TO-236AB package
Wide operating temperature range
Compliance with industry standards
Compatibility
Suitable for a variety of electronic circuit designs
Application Areas
Suitable for use in various power management and control applications
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Compact and robust package
Wide operating temperature range
Low on-resistance for high efficiency
High current capability
Low input capacitance for fast switching
High power dissipation capability
Suitable for a variety of power management and control applications