Manufacturer Part Number
PMV50XPR
Manufacturer
Nexperia
Introduction
The PMV50XPR is a P-channel MOSFET transistor from Nexperia, designed for a wide range of power management and switching applications.
Product Features and Performance
20V drain-source voltage (Vdss)
Maximum gate-source voltage (Vgs) of ±12V
Low on-resistance (Rds(on)) of 60mΩ @ 3.6A, 4.5V
Continuous drain current (Id) of 3.6A at 25°C
Input capacitance (Ciss) of 744pF @ 20V
490mW power dissipation at 25°C (Ta), 4.63W at case temperature (Tc)
Operating temperature range of -55°C to 150°C
Product Advantages
High efficiency due to low on-resistance
Compact TO-236AB package for space-constrained designs
Suitable for a wide range of power management and switching applications
Key Technical Parameters
MOSFET technology
P-channel FET type
900mV gate threshold voltage (Vgs(th)) @ 250μA
12nC gate charge (Qg) @ 4.5V
Surface mount package
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
The PMV50XPR is compatible with a wide range of electronic circuits and systems that require a high-performance, low-resistance P-channel MOSFET.
Application Areas
Power management circuits
Switching applications
Motor control
Battery charging and discharging
General-purpose power switching
Product Lifecycle
The PMV50XPR is an active product, and Nexperia continues to support it. Replacements or upgrades may become available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
Compact and space-saving TO-236AB package
Wide operating temperature range
Robust and reliable performance
RoHS3 compliance for use in modern electronics
