Manufacturer Part Number
PMV31XN,215
Manufacturer
NXP Semiconductors
Introduction
High-performance N-channel TrenchMOS power MOSFET in a SOT-23 (TO-236AB) package.
Product Features and Performance
N-channel MOSFET with low on-resistance
Suitable for use in power management applications
Optimized for low gate charge and low output charge
Qualified to AEC-Q101 standard for automotive applications
Product Advantages
Excellent efficiency and thermal performance
Compact SOT-23 (TO-236AB) package
Robust and reliable
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Rds On (Max) @ Id, Vgs: 37mOhm @ 1.5A, 4.5V
Current Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 20 V
Power Dissipation (Max): 280mW (Tj)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
Quality and Safety Features
RoHS3 compliant
Qualified to AEC-Q101 standard for automotive applications
Compatibility
Tape & Reel (TR) packaging
SOT-23 (TO-236AB) package
Application Areas
Power management
Switch-mode power supplies
Motor control
Automotive electronics
Product Lifecycle
Current product
Replacements and upgrades available
Several Key Reasons to Choose This Product
Excellent efficiency and thermal performance
Compact SOT-23 (TO-236AB) package for space-constrained designs
Robust and reliable, qualified to AEC-Q101 standard
Optimized for low gate charge and low output charge, improving efficiency
Suitable for a wide range of power management applications
PMV31XNFreescale / NXP Semiconductors