Manufacturer Part Number
PMV30UN2R
Manufacturer
Nexperia
Introduction
The PMV30UN2R is a discrete N-Channel MOSFET transistor from Nexperia, designed for a wide range of power switching and control applications.
Product Features and Performance
Drain-Source Voltage (Vdss) of 20V
Extremely low on-resistance (Rds(on)) of 32mΩ at 4.2A, 4.5V
Continuous Drain Current (Id) of 4.2A at 25°C
Wide Operating Temperature Range of -55°C to 150°C
Input Capacitance (Ciss) of 655pF at 10V
Power Dissipation of 490mW at Ta and 5W at Tc
Product Advantages
Excellent on-state performance with low Rds(on)
High current handling capability
Suitable for a wide range of temperature conditions
Small package size for compact designs
Key Technical Parameters
Drain-Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs): ±12V
Drain Current (Id): 4.2A
On-Resistance (Rds(on)): 32mΩ
Input Capacitance (Ciss): 655pF
Power Dissipation: 490mW (Ta), 5W (Tc)
Quality and Safety Features
RoHS3 compliant
TO-236AB package
Suitable for surface mount applications
Compatibility
Suitable for a wide range of power switching and control applications
Application Areas
Power management circuits
Motor control
Switching regulators
General-purpose power switching
Product Lifecycle
Current production part
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent on-state performance with low Rds(on) for efficient power switching
High current handling capability for demanding applications
Wide operating temperature range for versatile use
Small package size for compact design integration
RoHS3 compliance for environmental responsibility
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