Manufacturer Part Number
PMV35EPER
Manufacturer
Nexperia
Introduction
The PMV35EPER is a p-channel MOSFET transistor from Nexperia. It is a discrete semiconductor device used in various electronic circuits and applications.
Product Features and Performance
P-channel MOSFET transistor
30V drain-to-source voltage (Vdss)
45mΩ maximum on-resistance (Rds(on)) at 4.2A and 10V
3A continuous drain current (Id) at 25°C
793pF maximum input capacitance (Ciss) at 15V
480mW maximum power dissipation at 25°C (Ta), 1.2W at 100°C (Tc)
-55°C to 150°C operating temperature range
Product Advantages
Low on-resistance for efficient power switching
High current handling capability
Compact surface-mount package
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 45mΩ @ 4.2A, 10V
Drain Current (Id): 5.3A @ 25°C
Input Capacitance (Ciss): 793pF @ 15V
Power Dissipation: 480mW (Ta), 1.2W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Reliable performance in a wide range of operating conditions
Compatibility
Compatible with various electronic circuits and applications that require a p-channel MOSFET with the specified electrical and thermal characteristics.
Application Areas
Power management circuits
Switching power supplies
Motor control applications
Battery management systems
General-purpose electronic circuits
Product Lifecycle
The PMV35EPER is an active product and is not nearing discontinuation.
Replacement or upgrade options may be available from Nexperia or other manufacturers, depending on specific application requirements.
Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
Reliable performance in a wide temperature range
Compact surface-mount package for space-constrained designs
Suitable for a variety of electronic applications that require a p-channel MOSFET with the specified specifications
RoHS3 compliance for environmentally-friendly applications