Manufacturer Part Number
A3T18H400W23SR6
Manufacturer
NXP Semiconductors
Introduction
The A3T18H400W23SR6 is a high-performance RF MOSFET transistor designed for use in various wireless communication applications.
Product Features and Performance
LDMOS technology for high power and efficiency
170W output power
8dB gain
Operates at 1.805GHz to 1.88GHz frequency range
10A current rating
65V rated voltage
Product Advantages
Excellent power handling and efficiency
Robust design for reliable operation
Suitable for a wide range of wireless applications
Key Technical Parameters
Package: ACP-1230S-4L2S, Tape & Reel
RoHS3 compliant
Dual configuration
Quality and Safety Features
Meets RoHS3 environmental compliance standards
Rigorous quality control and testing procedures
Compatibility
Suitable for various wireless communication systems and infrastructure
Application Areas
Wireless base stations
Radio frequency (RF) power amplifiers
Cellular network infrastructure
Broadband wireless access systems
Product Lifecycle
Currently in production
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
High-power and efficient performance
Robust and reliable design for demanding applications
Wide operating frequency range and compatibility
Compliance with environmental regulations
Availability of replacement and upgrade options