MRF8P20160HSR3 - Freescale Semiconductor

Manufacturer Part Number

MRF8P20160HSR3

Manufacturer

Freescale Semiconductor, Inc. (NXP Semiconductors)

Introduction

High-power LDMOS RF transistor designed for 1.92GHz wireless infrastructure applications.

Product Features and Performance

High power capability of 37W

Broadband operation from 1.7-2.2GHz

High gain of 16.5dB

Excellent linearity and efficiency

Rugged LDMOS technology

Product Advantages

Reliable and robust performance

Optimized for 1.92GHz wireless infrastructure

Efficient power delivery

Wideband operation

Key Technical Parameters

Power Output: 37W

Test Current: 550mA

Rated Voltage: 65V

Gain: 16.5dB

Test Voltage: 28V

Frequency: 1.92GHz

Quality and Safety Features

RoHS3 compliant

Packaged in NI-780S-4 format

Compatibility

Can be used in 1.92GHz wireless infrastructure equipment such as base stations and repeaters.

Application Areas

Wireless infrastructure

Base stations

Repeaters

Product Lifecycle

This product is an active, in-production part from NXP Semiconductors. Replacement or upgrade options may be available for future product needs.

Key Reasons to Choose

High power capability for efficient wireless infrastructure

Broadband operation for versatile use

Excellent linearity and efficiency for improved system performance

Rugged LDMOS technology for reliable long-term operation