MRF8P20160HSR3 - NXP USA Inc.

Manufacturer Part Number

MRF8P20160HSR3

Manufacturer

NXP Semiconductors

Introduction

High-performance RF MOSFET transistor designed for cellular infrastructure and other high-power RF applications.

Product Features and Performance

High power output of 37W

Operates at 1.92GHz frequency

Gain of 16.5dB

Rated voltage of 65V

Test voltage of 28V

Test current of 550mA

Product Advantages

Robust LDMOS technology provides high efficiency and reliability

Compact surface mount package for easy integration

Suitable for a wide range of cellular infrastructure and high-power RF applications

Key Technical Parameters

Power output: 37W

Frequency: 1.92GHz

Gain: 16.5dB

Rated voltage: 65V

Test voltage: 28V

Test current: 550mA

Quality and Safety Features

RoHS3 compliant

NI-780S-4L package for reliable performance

Compatibility

Designed for cellular infrastructure and high-power RF applications

Application Areas

Cellular base stations

High-power RF amplifiers

Other high-power RF equipment

Product Lifecycle

This product is still in active production and available for purchase

No known plans for discontinuation or replacement at this time

Key Reasons to Choose This Product

High power output and efficiency for demanding RF applications

Robust LDMOS technology for reliable performance

Compact surface mount package for easy integration

Suitable for a wide range of cellular infrastructure and high-power RF equipment