Manufacturer Part Number
SS8050CTA
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Single Bipolar Junction Transistor (BJT)
Product Features and Performance
TO-92-3 package
Operating temperature up to 150°C
Power rating of 1W
Collector-emitter breakdown voltage up to 25V
Collector current up to 1.5A
Collector cutoff current up to 100nA
Low collector-emitter saturation voltage
High DC current gain (hFE) of 120 (min)
Transition frequency of 100MHz
Product Advantages
Reliable and robust design
Suitable for a wide range of applications
Optimized performance characteristics
Key Technical Parameters
Package: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Operating Temperature: 150°C (TJ)
Power Rating: 1W
Collector-Emitter Breakdown Voltage: 25V (max)
Collector Current: 1.5A (max)
Collector Cutoff Current: 100nA (max)
Collector-Emitter Saturation Voltage: 500mV @ 80mA, 800mV @ 800mA
DC Current Gain (hFE): 120 (min) @ 100mA, 1V
Transition Frequency: 100MHz
Quality and Safety Features
Robust and reliable construction
Designed for safe and efficient operation
Compatibility
Suitable for a wide range of electronic circuits and applications
Application Areas
Power supplies
Amplifiers
Switching circuits
Motor control
Industrial electronics
Product Lifecycle
Current product offering
Replacement and upgrade options may be available
Key Reasons to Choose This Product
Excellent performance characteristics
Reliable and robust design
Broad compatibility and versatility
Cost-effective solution
Readily available and widely used