Manufacturer Part Number
SS8050CTA
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
TO-92-3 Package
Operating Temperature: 150°C (TJ)
Power Rating: 1 W
Collector-Emitter Breakdown Voltage: 25 V
Collector Current: 1.5 A
Collector Cutoff Current: 100 nA (ICBO)
Collector-Emitter Saturation Voltage: 500 mV @ 80 mA, 800 mA
DC Current Gain (hFE): 120 @ 100 mA, 1 V
Transition Frequency: 100 MHz
Product Advantages
High power handling capability
Low saturation voltage
High current gain
High-frequency operation
Key Technical Parameters
Transistor Type: NPN
Mounting Type: Through Hole
Package: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with various electronic circuit designs requiring a high-performance NPN bipolar junction transistor
Application Areas
Suitable for use in power amplifiers, switches, and other electronic circuits
Product Lifecycle
Current production model, no discontinuation planned
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent power handling and efficiency
Low saturation voltage for improved circuit performance
High current gain for reliable operation
High-frequency capabilities for versatile applications
Robust package and RoHS compliance for quality and safety
SS8050-D-TACJ
SS8050-DBUFairchild (onsemi)