Manufacturer Part Number
SS8050DBU
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
TO-92-3 Package
Operating Temperature: 150°C (TJ)
Power Rating: 1 W
Collector-Emitter Breakdown Voltage: 25 V
Collector Current (Max): 1.5 A
Collector Cutoff Current (Max): 100 nA
Collector-Emitter Saturation Voltage: 500 mV @ 80 mA, 800 mA
DC Current Gain (hFE): 160 Min @ 100 mA, 1 V
Transition Frequency: 100 MHz
Product Advantages
High current handling capability
Low saturation voltage
High frequency performance
Key Technical Parameters
NPN Transistor Type
Through Hole Mounting
Quality and Safety Features
RoHS3 Compliant
Compatibility
TO-226-3, TO-92-3 (TO-226AA) Package Options
Application Areas
General-purpose amplifier and switch applications
Product Lifecycle
Active product
Replacements and upgrades may be available
Key Reasons to Choose
High current and power handling
Low saturation voltage for efficient performance
High frequency operation
Widely compatible package options
SS8050LT1MSV
SS8050RTESTMicroelectronics
SS8050CTAonsemiTRANS NPN 25V 1.5A TO92-3