Manufacturer Part Number
KSC5502DTM
Manufacturer
Fairchild (onsemi)
Introduction
High voltage, high power NPN bipolar junction transistor
Product Features and Performance
High voltage rating up to 750V
High power handling up to 118.16W
High collector current up to 2A
High current gain (hFE) up to 15
High transition frequency up to 11MHz
Product Advantages
Excellent high voltage and high power performance
Compact and efficient surface mount package
Reliable and robust design
Key Technical Parameters
Operating Temperature: 150°C (TJ)
Power Max: 118.16 W
Voltage Collector Emitter Breakdown (Max): 750 V
Current Collector (Ic) (Max): 2 A
Current Collector Cutoff (Max): 100A
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 1A
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 1V
Frequency Transition: 11MHz
Quality and Safety Features
Reliable and robust design
Compliance with industry safety standards
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Suitable for high voltage, high power electronic circuits and applications
Suitable for use in power supplies, motor drives, inverters, and other high-power electronic systems
Product Lifecycle
This product is an active and widely used component
Replacement and upgrade options are available from the manufacturer and other suppliers
Key Reasons to Choose This Product
Excellent high voltage and high power performance
Compact and efficient surface mount package
Reliable and robust design
Widely compatible and suitable for a variety of high-power electronic applications