Manufacturer Part Number
KSC5402DTF
Manufacturer
onsemi
Introduction
High-voltage, high-current NPN bipolar junction transistor (BJT)
Product Features and Performance
Designed for high-power switching and amplification applications
Capable of handling high voltages up to 525V
Supports high collector current up to 2A
Offers fast switching speed with transition frequency of 11MHz
Optimized for power supply, motor control, and industrial electronics
Product Advantages
Robust power handling capability
High voltage and current ratings
Fast switching performance
Suitable for high-power applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 525V
Current Collector (Ic) (Max): 2A
Current Collector Cutoff (Max): 250A
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 1A, 1V
Frequency Transition: 11MHz
Quality and Safety Features
RoHS3 compliant
Housed in a TO-252AA package for surface mount applications
Compatibility
Suitable for use in power supply, motor control, and industrial electronics applications
Application Areas
Power supplies
Motor drives
Industrial electronics
Switching and amplification circuits
Product Lifecycle
Currently in production
Availability of replacements or upgrades may depend on market demand and product roadmaps
Several Key Reasons to Choose This Product
Robust power handling capability to support high-voltage and high-current applications
Fast switching performance for efficient power conversion and control
Compact surface-mount package for space-constrained designs
RoHS3 compliance for use in environmentally-conscious applications
