Manufacturer Part Number
KSC5502DTM
Manufacturer
onsemi
Introduction
The KSC5502DTM is a high-voltage, high-current NPN bipolar junction transistor (BJT) from onsemi, suitable for use in a variety of power electronics applications.
Product Features and Performance
High voltage rating up to 600V
High current handling capability up to 2A
High power dissipation up to 50W
High DC current gain of at least 4 at 1A, 1V
High transition frequency of 11MHz
Compact TO-252AA (DPAK) surface mount package
Product Advantages
Excellent power handling capability
High voltage and current ratings
Suitable for high-power switching and amplification applications
Compact surface mount package
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 2A
Current Collector Cutoff (Max): 100A
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 1A, 1V
Frequency Transition: 11MHz
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with a variety of power electronics applications
Application Areas
Switching power supplies
Motor drives
Power amplifiers
Industrial control systems
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
High voltage and current handling capabilities
Excellent power dissipation and thermal performance
Compact surface mount package for space-constrained designs
Suitable for a wide range of power electronics applications
Reliable and high-quality design from a reputable manufacturer
