Manufacturer Part Number
KSC5026MOS
Manufacturer
Fairchild (onsemi)
Introduction
NPN Bipolar Junction Transistor (BJT)
Product Features and Performance
High Voltage (800V max Collector-Emitter Voltage)
High Power Rating (20W max Power Dissipation)
High Collector Current (1.5A max Collector Current)
Wide Operating Temperature Range (-65°C to +150°C)
High Frequency (15MHz Transition Frequency)
Stable DC Current Gain (hFE: 20 min @ 100mA, 5V)
Product Advantages
Reliable performance in high voltage, high power, and high current applications
Suitable for use in various power electronics and industrial control circuits
Excellent frequency response for high-speed switching applications
Key Technical Parameters
Collector-Emitter Voltage (VCEO): 800V
Collector Current (IC): 1.5A
Power Dissipation (PD): 20W
Operating Temperature (TJ): -65°C to +150°C
Transition Frequency (fT): 15MHz
DC Current Gain (hFE): 20 min @ 100mA, 5V
Quality and Safety Features
Robust TO-126-3 package for reliable operation
Stringent quality control and testing processes
Compliance with industry safety and environmental standards
Compatibility
Compatible with various power electronic and industrial control applications
Can be used as a replacement or upgrade for similar bipolar transistors
Application Areas
Power supplies
Motor drives
Switching circuits
Inverters
Industrial control systems
Product Lifecycle
This product is an active and widely available component
No plans for discontinuation or end-of-life, ensuring long-term availability
Upgrades and replacements may become available over time as technology evolves
Key Reasons to Choose This Product
Excellent high voltage, high power, and high current capabilities
Reliable performance across a wide temperature range
Suitable for high-speed switching and power electronics applications
Robust package and quality construction for long-term reliability
Widespread compatibility and availability for easy integration into designs