KSC5026MOS - onsemi

Manufacturer Part Number

KSC5026MOS

Manufacturer

onsemi

Introduction

High voltage, high current NPN bipolar junction transistor

Product Features and Performance

Operating temperature up to 150°C

Maximum power dissipation of 20W

Collector-emitter breakdown voltage up to 800V

Collector current up to 1.5A

Collector cutoff current up to 10A

Low collector-emitter saturation voltage of 2V @ 150mA, 750mA

DC current gain of 20 @ 100mA, 5V

Transition frequency of 15MHz

Product Advantages

Suitable for high-voltage, high-current switching and amplifier applications

Robust design for reliable operation

Compact TO-126-3 package

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 800V

Current Collector (Ic) (Max): 1.5A

Current Collector Cutoff (Max): 10A

Vce Saturation (Max) @ Ib, Ic: 2V @ 150mA, 750mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V

Frequency Transition: 15MHz

Quality and Safety Features

RoHS3 compliant

Suitable for through-hole mounting

Compatibility

TO-126-3 package

Application Areas

High-voltage, high-current switching and amplifier circuits

Industrial and automotive electronics

Power supplies

Motor control

Product Lifecycle

Currently available

No information on discontinuation or replacement

Several Key Reasons to Choose This Product

High voltage and current capability

Robust design for reliable operation

Compact package

Suitable for a wide range of high-power applications

RoHS3 compliance for environmental responsibility