KSC5027OTU - onsemi

Manufacturer Part Number

KSC5027OTU

Manufacturer

onsemi

Introduction

High-voltage NPN silicon power transistor

Designed for switching and amplifier applications

Product Features and Performance

High collector-emitter breakdown voltage of 800V

High collector current rating of 3A

Power dissipation capability of 50W

Efficient heat dissipation through TO-220-3 package

High current gain of 20 (minimum) at 200mA, 5V

Wide operating temperature range up to 150°C

Product Advantages

Excellent performance for high-voltage, high-current applications

Reliable and robust design

Efficient thermal management

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 800V

Collector Current (IC): 3A

Power Dissipation (Pd): 50W

DC Current Gain (hFE): 20 (minimum) at 200mA, 5V

Transition Frequency (fT): 15MHz

Operating Temperature Range (TJ): -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Tested and certified for reliability and safety

Compatibility

Through-hole mounting in TO-220-3 package

Compatible with a wide range of high-power electronic circuits and applications

Application Areas

Switching power supplies

Motor control circuits

Inverters and converters

Industrial and consumer electronics

Product Lifecycle

Current production

No planned discontinuation

Replacement and upgrade options available

Key Reasons to Choose This Product

Exceptional high-voltage and high-current performance

Reliable and efficient thermal management

Robust and durable design for demanding applications

Wide operating temperature range

RoHS3 compliance for environmental responsibility

Compatibility with various high-power electronic circuits