Manufacturer Part Number
KSC1815YTA
Manufacturer
Fairchild (onsemi)
Introduction
A high-performance NPN bipolar junction transistor (BJT) suitable for a wide range of applications.
Product Features and Performance
Capable of operating at high temperatures up to 150°C
High power handling capability of up to 400 mW
High collector-emitter breakdown voltage of up to 50V
High collector current of up to 150 mA
Low collector cutoff current of only 100 nA
Low collector-emitter saturation voltage of 250 mV @ 10 mA, 100 mA
High current gain (hFE) of at least 70 @ 2 mA, 6V
High transition frequency of 80 MHz
Product Advantages
Excellent thermal and electrical performance
Robust and reliable construction
Versatile for use in various electronic circuits and applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 50V
Collector Current (Max): 150 mA
Collector Cutoff Current (Max): 100 nA
Collector-Emitter Saturation Voltage (Max): 250 mV @ 10 mA, 100 mA
Current Gain (hFE Min): 70 @ 2 mA, 6V
Transition Frequency: 80 MHz
Operating Temperature: -55°C to 150°C
Quality and Safety Features
Manufactured to high quality standards
Robust and reliable construction
Meets relevant safety and regulatory requirements
Compatibility
Through-hole mounting in TO-92-3 package
Widely compatible with various electronic circuit designs
Application Areas
Amplifiers
Switching circuits
Power supplies
Automotive electronics
Industrial control systems
Product Lifecycle
This product is currently in active production
Replacement or upgrade models may be available in the future
Key Reasons to Choose This Product
Excellent thermal and electrical performance
High power handling capability
Wide operating voltage and current range
Robust and reliable construction
Suitable for a variety of electronic applications
Maintains high performance even at elevated temperatures