KSC1845FTA - onsemi

Manufacturer Part Number

KSC1845FTA

Manufacturer

onsemi

Introduction

The KSC1845FTA is a discrete bipolar junction transistor (BJT) in a TO-92 package, designed for general-purpose amplification and switching applications.

Product Features and Performance

High-frequency performance with a transition frequency (fT) of 110 MHz

Low collector-emitter saturation voltage (VCE(sat)) of 300 mV @ 1 mA, 10 mA

High DC current gain (hFE) of 300 min. @ 1 mA, 6 V

Low collector cutoff current (ICBO) of 50 nA max.

Rated for a maximum collector current (IC) of 50 mA and a maximum power dissipation of 500 mW

Product Advantages

Suitable for a wide range of amplifier and switching applications

Robust and reliable performance in through-hole mounting

RoHS-3 compliant for environmentally-conscious design

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 120 V

Collector-Emitter Saturation Voltage (VCE(sat)): 300 mV @ 1 mA, 10 mA

DC Current Gain (hFE): 300 min. @ 1 mA, 6 V

Transition Frequency (fT): 110 MHz

Maximum Collector Current (IC): 50 mA

Maximum Power Dissipation: 500 mW

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS-3 compliant

Meets high-quality standards for discrete semiconductor products

Compatibility

Suitable for a wide range of amplifier and switching applications in electronic circuits

Application Areas

General-purpose amplification and switching applications

Audio amplifiers

Switching power supplies

Instrumentation and control systems

Product Lifecycle

The KSC1845FTA is an active and readily available product from onsemi.

There are no plans for discontinuation, and replacement or upgrade options are readily available.

Key Reasons to Choose This Product

High-frequency performance with a transition frequency (fT) of 110 MHz, enabling efficient operation in high-speed applications.

Low collector-emitter saturation voltage (VCE(sat)) of 300 mV, resulting in improved efficiency and reduced power dissipation.

High DC current gain (hFE) of 300 min., providing reliable and stable amplification performance.

Robust and reliable through-hole mounting, suitable for a wide range of electronic circuit designs.

RoHS-3 compliance for environmentally-conscious design requirements.

Readily available and actively supported by onsemi, ensuring long-term product availability and support.