Manufacturer Part Number
KSC1815YTA
Manufacturer
onsemi
Introduction
The KSC1815YTA is a discrete NPN bipolar junction transistor (BJT) from onsemi, suitable for various electronic circuit applications.
Product Features and Performance
Capable of handling up to 150 mA of collector current
Breakdown voltage of up to 50 V between collector and emitter
Transition frequency of 80 MHz
Minimum DC current gain (hFE) of 70 at 2 mA and 6 V
Collector-emitter saturation voltage of 250 mV at 10 mA and 100 mA
Product Advantages
Efficient power handling capabilities
High-frequency performance
Reliable operation across a wide temperature range
Key Technical Parameters
Power Rating: 400 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 150 mA
Collector Cutoff Current: 100 nA
DC Current Gain (hFE): 70 (min)
Transition Frequency: 80 MHz
Quality and Safety Features
RoHS3 compliant
Housed in a reliable TO-92-3 package
Compatibility
Suitable for through-hole mounting
Application Areas
Amplifier circuits
Switching circuits
General-purpose electronic applications
Product Lifecycle
This product is currently in active production and available for purchase.
Replacement or upgrade options may be available from onsemi or other semiconductor manufacturers.
Key Reasons to Choose This Product
Proven performance and reliability from a trusted manufacturer
Compact and easy-to-use through-hole package
Versatile applications in various electronic circuits
Compliance with RoHS environmental regulations
KSC1815GRFSC