Manufacturer Part Number
FQU17P06TU
Manufacturer
Fairchild (onsemi)
Introduction
High-performance P-channel power MOSFET with low on-resistance and high-speed switching performance.
Product Features and Performance
Low on-resistance (RDS(on) max: 135 mΩ)
High current capability (ID,continuous: 12 A at 25°C)
Fast switching speed
Wide operating temperature range (-55°C to 150°C)
High voltage rating (VDS: 60 V)
Low gate charge (Qg max: 27 nC)
Product Advantages
Efficient power management
Improved energy efficiency
Reliable high-current operation
Robust design for harsh environments
Key Technical Parameters
Drain-to-Source Voltage (VDS): 60 V
Gate-to-Source Voltage (VGS): ±25 V
On-Resistance (RDS(on)): 135 mΩ
Continuous Drain Current (ID): 12 A
Input Capacitance (Ciss): 900 pF
Power Dissipation (Ptot): 2.5 W (Ta), 44 W (Tc)
Quality and Safety Features
Compliant with industry standards
Robust and reliable design
Thermal protection for safe operation
Compatibility
Suitable for a wide range of power management applications
Compatible with various electronic systems and circuits
Application Areas
Power supplies
Motor drives
Inverters
Industrial electronics
Automotive electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable operation in demanding environments
Flexible and versatile application potential
Robust design for long-term reliability
Competitive pricing and availability
FQU1N60CFairchild (onsemi)