Manufacturer Part Number
FQU1N60CTU
Manufacturer
onsemi
Introduction
The FQU1N60CTU is a high-performance N-channel MOSFET transistor from onsemi, designed for a wide range of power electronics and switching applications.
Product Features and Performance
600V drain-to-source voltage rating
Low on-state resistance of 11.5Ω at 500mA, 10V
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 170pF at 25V
Maximum power dissipation of 2.5W at Ta and 28W at Tc
Fast switching characteristics
Product Advantages
Excellent voltage handling capability
Low conduction losses
Wide temperature operation
Compact through-hole package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-State Resistance (Rds(on)): 11.5Ω @ 500mA, 10V
Continuous Drain Current (Id): 1A @ 25°C
Input Capacitance (Ciss): 170pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Quality and Safety Features
RoHS3 compliant
I-PAK package for improved thermal management
Compatibility
The FQU1N60CTU is suitable for use in a variety of power electronics applications, including motor drives, switch-mode power supplies, and power inverters.
Application Areas
Power electronics
Motor drives
Switch-mode power supplies
Power inverters
Product Lifecycle
The FQU1N60CTU is an active product, and onsemi continues to provide support and availability for this device. Replacement or upgrade options may be available as technology evolves.
Key Reasons to Choose This Product
Excellent voltage handling capability up to 600V
Low on-state resistance for improved efficiency
Wide temperature range for versatile applications
Compact through-hole package for easy integration
Proven reliability and performance from onsemi
