Manufacturer Part Number
FQU13N10LTU
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel power MOSFET in I-PAK package
Product Features and Performance
100V drain-to-source voltage
180mΩ maximum on-resistance
10A continuous drain current
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 520pF
5W power dissipation at 25°C ambient, 40W at case temperature
Product Advantages
Robust and reliable performance
Low on-resistance for efficient power conversion
Compact I-PAK package for high-density designs
Wide operating temperature range
Key Technical Parameters
Drain-to-source voltage (Vdss): 100V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 180mΩ @ 5A, 10V
Drain current (Id): 10A
Input capacitance (Ciss): 520pF @ 25V
Power dissipation: 2.5W (Ta), 40W (Tc)
Quality and Safety Features
MOSFET technology for high reliability
Complies with relevant safety and quality standards
Compatibility
Through-hole mounting for easy integration into various designs
Application Areas
Switching power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
Current production, no plans for discontinuation
Replacements and upgrades available as technology advances
Key Reasons to Choose This Product
Robust and reliable performance
Efficient power conversion with low on-resistance
Compact package for high-density designs
Wide operating temperature range for versatile applications
Complies with relevant safety and quality standards
Readily available and with replacement options
