Manufacturer Part Number
FQPF9N90CT
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
High breakdown voltage of 900V
Low on-resistance of 1.4Ω @ 4A, 10V
Wide operating temperature range of -55°C to 150°C
High continuous drain current of 8A at 25°C
Low input capacitance of 2730pF at 25V
Maximum power dissipation of 68W at Tc
Product Advantages
Excellent high-voltage switching performance
Efficient power conversion and control
Reliable operation in high-temperature environments
Suitable for a wide range of power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 900V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.4Ω @ 4A, 10V
Continuous Drain Current (Id): 8A at 25°C
Input Capacitance (Ciss): 2730pF at 25V
Power Dissipation (Pd): 68W at Tc
Quality and Safety Features
Robust TO-220 package design
Reliable MOSFET technology
Compliance with safety and environmental standards
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switching power supplies
Inverters and motor drives
Power factor correction circuits
High-voltage industrial and consumer electronics
Product Lifecycle
Currently available
No plans for discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Excellent high-voltage switching performance
Low on-resistance for efficient power conversion
Wide operating temperature range for reliable operation
High continuous drain current capability
Robust and reliable TO-220 package design
Suitable for a variety of power electronics applications
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