FQPF9N90CT - Fairchild Semiconductor

Manufacturer Part Number

FQPF9N90CT

Manufacturer

Fairchild (onsemi)

Introduction

High-performance N-channel power MOSFET

Product Features and Performance

High breakdown voltage of 900V

Low on-resistance of 1.4Ω @ 4A, 10V

Wide operating temperature range of -55°C to 150°C

High continuous drain current of 8A at 25°C

Low input capacitance of 2730pF at 25V

Maximum power dissipation of 68W at Tc

Product Advantages

Excellent high-voltage switching performance

Efficient power conversion and control

Reliable operation in high-temperature environments

Suitable for a wide range of power applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 900V

Gate-to-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 1.4Ω @ 4A, 10V

Continuous Drain Current (Id): 8A at 25°C

Input Capacitance (Ciss): 2730pF at 25V

Power Dissipation (Pd): 68W at Tc

Quality and Safety Features

Robust TO-220 package design

Reliable MOSFET technology

Compliance with safety and environmental standards

Compatibility

Suitable for a wide range of power electronics applications

Application Areas

Switching power supplies

Inverters and motor drives

Power factor correction circuits

High-voltage industrial and consumer electronics

Product Lifecycle

Currently available

No plans for discontinuation

Replacement or upgrade options may be available

Key Reasons to Choose This Product

Excellent high-voltage switching performance

Low on-resistance for efficient power conversion

Wide operating temperature range for reliable operation

High continuous drain current capability

Robust and reliable TO-220 package design

Suitable for a variety of power electronics applications