Manufacturer Part Number
FQPF9N50C
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, high-power N-channel MOSFET with low on-resistance and fast switching characteristics.
Product Features and Performance
Operates at high voltages up to 500V
Provides high continuous drain current of 9A at 25°C
Features low on-resistance of 800mΩ at 4.5A and 10V
Exhibits fast switching with low gate charge of 35nC at 10V
Supports a wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent performance in high-voltage, high-power applications
Efficient power conversion with low conduction and switching losses
Reliable operation in demanding environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 800mΩ @ 4.5A, 10V
Continuous Drain Current (Id): 9A @ 25°C
Input Capacitance (Ciss): 1030pF @ 25V
Power Dissipation (Pd): 44W @ Tc
Quality and Safety Features
RoHS3 compliant
Through-hole TO-220-3 package for reliable mounting
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Industrial controls
Telecom and server equipment
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
High-voltage and high-current capability for demanding applications
Excellent efficiency and low power losses due to low on-resistance
Fast switching performance for improved system responsiveness
Reliable operation across a wide temperature range
Compliance with industry safety and environmental standards
FQPF9N90CT MOSAMI Semiconductor/onsemi