FQPF9P25 - onsemi

Manufacturer Part Number

FQPF9P25

Manufacturer

onsemi

Introduction

High-performance P-channel enhancement-mode power MOSFET in a TO-220 package

Product Features and Performance

Drain-to-source voltage (Vdss) of 250 V

Low on-resistance (Rds(on)) of 620 mOhm @ 3 A, 10 V

Continuous drain current (Id) of 6 A at 25°C case temperature

Wide operating temperature range of -55°C to 150°C

Low gate charge (Qg) of 38 nC @ 10 V

Fast switching speed

Product Advantages

Efficient power conversion with low power loss

Reliable operation in high-voltage applications

Suitable for various power management and control circuits

Key Technical Parameters

Drain-to-source voltage (Vdss): 250 V

Gate-to-source voltage (Vgs): ±30 V

On-resistance (Rds(on)): 620 mOhm @ 3 A, 10 V

Continuous drain current (Id): 6 A @ 25°C case temperature

Input capacitance (Ciss): 1180 pF @ 25 V

Power dissipation (Tc): 50 W

Quality and Safety Features

RoHS3 compliant

Reliable operation within the specified temperature range

Compatibility

Through-hole mounting in TO-220 package

Suitable for various power management and control applications

Application Areas

Switching power supplies

Motor drives

Lighting control

Industrial and consumer electronics

Product Lifecycle

Currently in production

Replacement and upgrade options available from onsemi

Key Reasons to Choose This Product

Excellent power efficiency and low power loss

High-voltage operation capability

Robust and reliable performance across wide temperature range

Suitable for various power management and control applications

Available in standard through-hole TO-220 package