Manufacturer Part Number
FQPF3N80C
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, n-channel power MOSFET
Product Features and Performance
Drain-to-source voltage (Vdss) up to 800V
Continuous drain current (ID) up to 3A at 25°C case temperature
Low on-resistance (RDS(on)) of 4.8Ω at 1.5A, 10V
Input capacitance (Ciss) of 705pF at 25V
Power dissipation (Pd) up to 39W at 25°C case temperature
Gate-to-source voltage (Vgs) up to ±30V
Product Advantages
High-voltage operation
Low on-resistance for high efficiency
High power handling capability
Suitable for a wide range of power conversion and switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (RDS(on)): 4.8Ω @ 1.5A, 10V
Continuous Drain Current (ID): 3A at 25°C case temperature
Input Capacitance (Ciss): 705pF at 25V
Power Dissipation (Pd): 39W at 25°C case temperature
Quality and Safety Features
Operating temperature range: -55°C to 150°C
Rugged and reliable MOSFET design
Compliant with relevant safety and quality standards
Compatibility
Suitable for a wide range of power conversion and switching applications, such as switched-mode power supplies, motor drives, and inverters.
Application Areas
Power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and available for purchase.
Replacement or upgrade options may be available, depending on the specific application requirements.
Several Key Reasons to Choose This Product
High-voltage capability up to 800V
Low on-resistance for high efficiency
High power handling up to 39W
Wide operating temperature range of -55°C to 150°C
Rugged and reliable MOSFET design
Suitable for a wide range of power conversion and switching applications
