Manufacturer Part Number
FQPF3N80
Manufacturer
Fairchild (onsemi)
Introduction
High voltage N-channel power MOSFET with high breakdown voltage and low on-resistance.
Product Features and Performance
Operating temperature range: -55°C to 150°C
Drain to source voltage (Vdss): 800V
Gate-source voltage (Vgs) maximum: ±30V
On-resistance (Rds(on)) maximum: 5Ω at 900mA, 10V
Continuous drain current (Id) at 25°C: 1.8A
Input capacitance (Ciss) maximum: 690pF at 25V
Power dissipation maximum: 39W
Product Advantages
High breakdown voltage
Low on-resistance
Suitable for high voltage applications
Key Technical Parameters
MOSFET technology: N-channel
Threshold voltage (Vgs(th)) maximum: 5V at 250μA
Gate charge (Qg) maximum: 19nC at 10V
Mounting type: Through-hole
Quality and Safety Features
RoHS3 compliant
TO-220F-3 package
Compatibility
Suitable for various high voltage and high power applications.
Application Areas
Switching power supplies
Motor drives
Industrial controls
High-voltage DC/DC converters
Product Lifecycle
This product is currently in production and available. No plans for discontinuation or replacement have been announced.
Several Key Reasons to Choose This Product
Reliable high voltage operation with low on-resistance
Robust design for wide temperature range
Proven Fairchild (onsemi) quality and performance
Readily available in standard through-hole packaging
Versatile application in various high power electronic systems
FQPF3N90CFairchild (onsemi)