Manufacturer Part Number
FQPF3N80C
Manufacturer
onsemi
Introduction
The FQPF3N80C is a high-voltage, high-performance N-channel MOSFET transistor from onsemi, designed for a wide range of power management applications.
Product Features and Performance
High drain-to-source voltage up to 800V
Low on-resistance of 4.8Ω @ 1.5A, 10V
Continuous drain current up to 3A at 25°C
High input capacitance of 705pF @ 25V
Maximum power dissipation of 39W at Tc
Product Advantages
Excellent high-voltage handling capability
Low on-resistance for efficient power conversion
High current capability for demanding applications
Robust design for reliable operation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 4.8Ω @ 1.5A, 10V
Continuous Drain Current (Id): 3A @ 25°C
Input Capacitance (Ciss): 705pF @ 25V
Power Dissipation (Pd): 39W @ Tc
Quality and Safety Features
RoHS3 compliant for environmental compatibility
TO-220F-3 package for reliable through-hole mounting
Compatibility
The FQPF3N80C is compatible with a wide range of power management and control applications, including:
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Inductive loads
Brushless DC motor control
Product Lifecycle
The FQPF3N80C is an active product from onsemi, with no plans for discontinuation. Replacement and upgrade options may be available as technology advances.
Key Reasons to Choose This Product
Excellent high-voltage handling capability up to 800V
Low on-resistance for efficient power conversion
High current capability up to 3A for demanding applications
Robust design for reliable operation in various environments
RoHS3 compliance for environmental compatibility
Proven reliability and performance from a trusted manufacturer, onsemi
FQPF3N60CVBSEMI