Manufacturer Part Number
FQA10N80C
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, N-channel MOSFET transistor for power switching applications
Product Features and Performance
800V drain-source voltage rating
Low on-resistance of 1.1Ω
10A continuous drain current at 25°C
Wide operating temperature range of -55°C to 150°C
Low gate charge of 58nC
Product Advantages
Efficient power conversion and switching
Robust design for high-voltage applications
Excellent thermal performance
Reliable and long-lasting operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.1Ω @ 5A, 10V
Continuous Drain Current (Id): 10A @ 25°C
Input Capacitance (Ciss): 2800pF @ 25V
Power Dissipation (Tc): 240W
Quality and Safety Features
ROHS3 compliant
Suitable for demanding power conversion applications
Reliable and robust design
Compatibility
TO-3P package
Suitable for through-hole mounting
Application Areas
Switch-mode power supplies
Motor drives
Inverters
High-voltage power conversion
Product Lifecycle
Currently in production
No known discontinuation plans
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High-voltage capability for demanding applications
Low on-resistance for efficient power conversion
Robust and reliable design for long-lasting operation
Wide operating temperature range for versatile use
Optimized for high-power, high-efficiency power conversion
FQA11N90C-F109onsemiPOWER FIELD-EFFECT TRANSISTOR, 1