Manufacturer Part Number
FQA10N80C
Manufacturer
onsemi
Introduction
The FQA10N80C is a high-voltage, N-channel MOSFET transistor in a TO-3P package, designed for use in a variety of power electronics applications.
Product Features and Performance
Operating temperature range of -55°C to 150°C
Drain-to-source voltage (Vdss) of 800V
Maximum gate-to-source voltage (Vgs) of ±30V
On-state resistance (Rds(on)) of 1.1Ω at 5A and 10V
Continuous drain current (Id) of 10A at 25°C
Input capacitance (Ciss) of 2800pF at 25V
Maximum power dissipation of 240W at 25°C
Product Advantages
High-voltage operation
Low on-state resistance
Robust thermal performance
Suitable for a wide range of power electronics applications
Key Technical Parameters
MOSFET technology
N-channel FET type
Threshold voltage (Vgs(th)) of 5V at 250A
Gate charge (Qg) of 58nC at 10V
Quality and Safety Features
TO-3P package for through-hole mounting
Designed for reliable and safe operation
Compatibility
Suitable for use in a variety of power electronics applications, such as motor drives, power supplies, and industrial controls.
Application Areas
Power electronics
Motor drives
Power supplies
Industrial controls
Product Lifecycle
The FQA10N80C is an active product and is not nearing discontinuation. Replacement or upgrade options are available from onsemi.
Key Reasons to Choose This Product
High-voltage capability for demanding applications
Low on-state resistance for efficient power delivery
Robust thermal performance for reliable operation
Compatibility with a wide range of power electronics applications
Availability of replacement and upgrade options from the manufacturer
