Manufacturer Part Number
FQA11N90
Manufacturer
onsemi
Introduction
High-voltage N-channel power MOSFET in a TO-3P package
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 900V
Maximum Gate-to-Source Voltage (Vgs) of ±30V
On-State Resistance (Rds(on)) of 960mΩ at 5.7A, 10V
Continuous Drain Current (Id) of 11.4A at 25°C (Tc)
Input Capacitance (Ciss) of 3500pF at 25V
Power Dissipation (Pd) of 300W at 25°C (Tc)
Operating Temperature Range of -55°C to 150°C (TJ)
Product Advantages
High-voltage operation
Low on-state resistance
High current capability
Suitable for high-power applications
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
Threshold Voltage (Vgs(th)) of 5V at 250A
Gate Charge (Qg) of 94nC at 10V
Quality and Safety Features
TO-3P package for enhanced thermal performance
Rated for high-temperature operation up to 150°C
Compatibility
Compatible with standard TO-3P mounting
Application Areas
Power supplies
Motor drives
Inverters
High-voltage switching circuits
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High-voltage, high-current capability
Low on-state resistance for efficient power conversion
Suitable for high-power, high-temperature applications
Reliable TO-3P package construction
