Manufacturer Part Number
FJX4002RTF
Manufacturer
Fairchild (onsemi)
Introduction
High-frequency, high-gain PNP pre-biased bipolar junction transistor (BJT)
Product Features and Performance
200 MHz transition frequency
100 mA maximum collector current
50 V maximum collector-emitter breakdown voltage
300 mV maximum collector-emitter saturation voltage at 10 mA collector current
30 minimum DC current gain at 5 mA collector current
10 kΩ base and emitter-base resistors
Product Advantages
Pre-biased for simplified circuit design
High-frequency operation
High current handling capability
Low saturation voltage
Key Technical Parameters
Power rating: 200 mW
Collector-Emitter Breakdown Voltage (VCEO): 50 V
Collector Current (IC): 100 mA
Collector Cutoff Current (ICBO): 100 nA
DC Current Gain (hFE): 30 min. @ 5 mA, 5 V
Transition Frequency (fT): 200 MHz
Base Resistor (R1): 10 kΩ
Emitter-Base Resistor (R2): 10 kΩ
Quality and Safety Features
RoHS3 compliant
Housed in a compact SC-70-3 (SOT323) surface-mount package
Compatibility
Suitable for a variety of electronic circuit applications, including small-signal amplifiers, switches, and logic gates
Application Areas
Audio and video equipment
Telecommunications equipment
Consumer electronics
Industrial control systems
Product Lifecycle
This product is currently in active production and availability is good.
Key Reasons to Choose This Product
High-performance pre-biased BJT for simplified circuit design
Excellent high-frequency capabilities up to 200 MHz
High current handling and low saturation voltage for efficient operation
Space-saving and robust surface-mount packaging
RoHS3 compliance for environmentally-conscious applications