FJX4002RTF - Fairchild Semiconductor

Manufacturer Part Number

FJX4002RTF

Manufacturer

Fairchild (onsemi)

Introduction

High-frequency, high-gain PNP pre-biased bipolar junction transistor (BJT)

Product Features and Performance

200 MHz transition frequency

100 mA maximum collector current

50 V maximum collector-emitter breakdown voltage

300 mV maximum collector-emitter saturation voltage at 10 mA collector current

30 minimum DC current gain at 5 mA collector current

10 kΩ base and emitter-base resistors

Product Advantages

Pre-biased for simplified circuit design

High-frequency operation

High current handling capability

Low saturation voltage

Key Technical Parameters

Power rating: 200 mW

Collector-Emitter Breakdown Voltage (VCEO): 50 V

Collector Current (IC): 100 mA

Collector Cutoff Current (ICBO): 100 nA

DC Current Gain (hFE): 30 min. @ 5 mA, 5 V

Transition Frequency (fT): 200 MHz

Base Resistor (R1): 10 kΩ

Emitter-Base Resistor (R2): 10 kΩ

Quality and Safety Features

RoHS3 compliant

Housed in a compact SC-70-3 (SOT323) surface-mount package

Compatibility

Suitable for a variety of electronic circuit applications, including small-signal amplifiers, switches, and logic gates

Application Areas

Audio and video equipment

Telecommunications equipment

Consumer electronics

Industrial control systems

Product Lifecycle

This product is currently in active production and availability is good.

Key Reasons to Choose This Product

High-performance pre-biased BJT for simplified circuit design

Excellent high-frequency capabilities up to 200 MHz

High current handling and low saturation voltage for efficient operation

Space-saving and robust surface-mount packaging

RoHS3 compliance for environmentally-conscious applications