Manufacturer Part Number
FJX4002RTF
Manufacturer
onsemi
Introduction
Discrete Semiconductor Products
Transistors Bipolar (BJT) Single, Pre-Biased
Product Features and Performance
SOT-323 package
200 mW maximum power
50 V maximum collector-emitter breakdown voltage
100 mA maximum collector current
100 nA maximum collector cutoff current
300 mV maximum collector-emitter saturation voltage
30 minimum DC current gain
200 MHz transition frequency
10 kOhms base resistor
10 kOhms emitter-base resistor
Surface mount mounting type
Product Advantages
Compact SOT-323 package
High power and voltage capabilities
Low saturation voltage
High current gain and frequency
Key Technical Parameters
Power Max: 200 mW
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Current Collector Cutoff (Max): 100 nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300 mV @ 5 mA, 10 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5 mA, 5 V
Frequency Transition: 200 MHz
Resistor Base (R1): 10 kOhms
Resistor Emitter Base (R2): 10 kOhms
Quality and Safety Features
Meets industry standards for quality and reliability
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Commonly used in amplifier, switch, and driver circuits in various electronic devices
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available as needed
Several Key Reasons to Choose This Product
Compact and space-saving SOT-323 package
High power and voltage handling capability
Low saturation voltage for efficient operation
High current gain and transition frequency for fast switching
Robust and reliable design for long-term use