FJX4002RTF - onsemi

Manufacturer Part Number

FJX4002RTF

Manufacturer

onsemi

Introduction

Discrete Semiconductor Products

Transistors Bipolar (BJT) Single, Pre-Biased

Product Features and Performance

SOT-323 package

200 mW maximum power

50 V maximum collector-emitter breakdown voltage

100 mA maximum collector current

100 nA maximum collector cutoff current

300 mV maximum collector-emitter saturation voltage

30 minimum DC current gain

200 MHz transition frequency

10 kOhms base resistor

10 kOhms emitter-base resistor

Surface mount mounting type

Product Advantages

Compact SOT-323 package

High power and voltage capabilities

Low saturation voltage

High current gain and frequency

Key Technical Parameters

Power Max: 200 mW

Voltage Collector Emitter Breakdown (Max): 50 V

Current Collector (Ic) (Max): 100 mA

Current Collector Cutoff (Max): 100 nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 300 mV @ 5 mA, 10 mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5 mA, 5 V

Frequency Transition: 200 MHz

Resistor Base (R1): 10 kOhms

Resistor Emitter Base (R2): 10 kOhms

Quality and Safety Features

Meets industry standards for quality and reliability

Compatibility

Compatible with a wide range of electronic circuits and applications

Application Areas

Commonly used in amplifier, switch, and driver circuits in various electronic devices

Product Lifecycle

Current product, no discontinuation planned

Replacements and upgrades available as needed

Several Key Reasons to Choose This Product

Compact and space-saving SOT-323 package

High power and voltage handling capability

Low saturation voltage for efficient operation

High current gain and transition frequency for fast switching

Robust and reliable design for long-term use