Manufacturer Part Number
FJX3014RTF
Manufacturer
Fairchild (onsemi)
Introduction
High-frequency, low-noise, pre-biased NPN bipolar junction transistor (BJT)
Product Features and Performance
Power rating up to 200 mW
Collector-emitter breakdown voltage up to 50V
Collector current up to 100 mA
Very low collector cutoff current of 100nA
Saturation voltage as low as 300 mV
DC current gain of 68 or more
Transition frequency up to 250 MHz
On-chip base and emitter resistors (4.7 kOhm and 47 kOhm)
Product Advantages
Pre-biased design for simplified biasing
High frequency performance
Low noise
Low power consumption
Small surface mount package
Key Technical Parameters
Power Rating: 200 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current: 100 mA
Collector Cutoff Current: 100 nA
Saturation Voltage: 300 mV
DC Current Gain: 68 or more
Transition Frequency: 250 MHz
Base Resistor: 4.7 kOhm
Emitter Resistor: 47 kOhm
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
SC-70 (SOT-323) package
Application Areas
High-frequency analog circuits
RF amplifiers
Switches
Oscillators
Biasing circuits
Product Lifecycle
Currently in production
No planned discontinuation
Key Reasons to Choose This Product
High-frequency performance up to 250 MHz
Low noise and low power consumption
Integrated base and emitter resistors for simplified biasing
Small surface mount package
RoHS3 compliance for environmental safety
FJX3007RTFonsemiSMALL SIGNAL BIPOLAR TRANSISTOR,