Manufacturer Part Number
FGA15N120ANTDTU
Manufacturer
Fairchild (onsemi)
Introduction
High-performance insulated gate bipolar transistor (IGBT) for various industrial and power electronics applications.
Product Features and Performance
NPT and Trench IGBT structure
Low conduction and switching losses
Fast switching speed
High voltage and current handling capability
Wide operating temperature range (-55°C to 150°C)
1200V collector-emitter breakdown voltage
30A collector current rating
4V maximum collector-emitter saturation voltage
330ns reverse recovery time
120nC gate charge
45A maximum collector current (pulsed)
3mJ turn-on and 600μJ turn-off switching energy
Product Advantages
Efficient and reliable power conversion
Suitable for high-power, high-frequency applications
Excellent thermal performance and robustness
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 30A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Reverse Recovery Time (trr): 330ns
Gate Charge: 120nC
Current Collector Pulsed (Icm): 45A
Switching Energy: 3mJ (on), 600μJ (off)
Td (on/off) @ 25°C: 15ns/160ns
Quality and Safety Features
ROHS3 compliant
TO-3P package with good thermal dissipation
Compatibility
Suitable for a wide range of industrial and power electronics applications
Application Areas
Power inverters
Motor drives
Uninterruptible power supplies (UPS)
Welding equipment
Induction heating systems
Renewable energy systems
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High efficiency and reliability for power conversion applications
Fast switching speed and low switching losses
Wide operating temperature range and robust design
Suitable for high-power, high-frequency applications
Good thermal management in the TO-3P package
Proven performance and reliability from a reputable manufacturer
FGA180N33ATFairchild (onsemi)