Manufacturer Part Number
FGA15N120ANTDTU
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single Transistor IGBT
Product Features and Performance
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 30 A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Reverse Recovery Time (trr): 330 ns
Gate Charge: 120 nC
Current Collector Pulsed (Icm): 45 A
Switching Energy: 3mJ (on), 600J (off)
Td (on/off) @ 25°C: 15ns/160ns
Product Advantages
Efficient and reliable IGBT performance
High voltage and current handling capability
Fast switching speeds
Key Technical Parameters
IGBT Type: NPT and Trench
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 30 A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Reverse Recovery Time (trr): 330 ns
Gate Charge: 120 nC
Current Collector Pulsed (Icm): 45 A
Switching Energy: 3mJ (on), 600J (off)
Td (on/off) @ 25°C: 15ns/160ns
Quality and Safety Features
Operating Temperature: -55°C ~ 150°C (TJ)
Power Max: 186 W
Manufacturer's packaging: TO-3P
Mounting Type: Through Hole
Compatibility
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Application Areas
Suitable for use in a variety of power electronics applications, such as motor drives, inverters, and power supplies.
Product Lifecycle
No information provided on discontinuation or replacement options.
Key Reasons to Choose This Product
High voltage and current handling capability
Fast switching speeds for efficient power conversion
Reliable and durable NPT and Trench IGBT technology
Wide operating temperature range
FGA15N120FTDTUonsemiIGBT 1200V 30A 220W TO3PN