Manufacturer Part Number
FDP2D3N10C
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-Channel PowerTrench MOSFET
Product Features and Performance
Low on-resistance
High current capability
Fast switching speed
High power dissipation
Wide operating temperature range
Robust design for reliable performance
Product Advantages
Excellent thermal management
High efficiency
Reduced power consumption
Improved system reliability
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2.3mΩ @ 100A, 10V
Continuous Drain Current (Id): 222A @ 25°C
Input Capacitance (Ciss): 11180pF @ 50V
Power Dissipation (Tc): 214W
Quality and Safety Features
Robust construction for durability
Compliance with industry safety standards
Rigorous testing and quality control
Compatibility
Suitable for a wide range of power electronic applications
Application Areas
Industrial power supplies
Motor drives
Inverters
Switching power supplies
Electric vehicles
Renewable energy systems
Product Lifecycle
Current production, no discontinuation plans known
Key Reasons to Choose This Product
Excellent performance characteristics
High efficiency and power density
Reliable and durable design
Broad compatibility and versatility
Backed by the expertise of Fairchild (onsemi)
FDP2D3N10ConsemiMOSFET N-CH 100V 222A TO220-3