FDP26N40 - onsemi

Manufacturer Part Number

FDP26N40

Manufacturer

onsemi

Introduction

The FDP26N40 is a N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that offers high-voltage, high-current performance in a compact TO-220-3 package.

Product Features and Performance

400V Drain-to-Source Voltage (Vdss)

26A Continuous Drain Current (Id) at 25°C

160mΩ On-Resistance (Rds(on)) at 13A, 10V

3185pF Input Capacitance (Ciss) at 25V

265W Power Dissipation at 25°C

Product Advantages

Robust high-voltage and high-current handling capabilities

Low on-resistance for efficient power conversion

Compact TO-220-3 package for space-constrained applications

Key Technical Parameters

N-Channel MOSFET

400V Drain-to-Source Voltage (Vdss)

±30V Gate-to-Source Voltage (Vgs)

5V Gate Threshold Voltage (Vgs(th)) at 250A

10V Drive Voltage (Gate Charge Qg: 60nC)

Quality and Safety Features

RoHS3 compliant

Operating temperature range: -55°C to 150°C

Compatibility

Compatible with various power electronics and control systems

Application Areas

Switching power supplies

Motor drives

Industrial controls

Automotive electronics

Product Lifecycle

This product is currently in production and widely available.

Replacements and upgrades may be available in the future.

Key Reasons to Choose This Product

Robust high-voltage and high-current handling capabilities

Efficient power conversion with low on-resistance

Compact and space-saving TO-220-3 package

Wide operating temperature range

RoHS3 compliance for environmentally-friendly applications