Manufacturer Part Number
FDP2D3N10C
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET with low on-resistance and high current handling capability
Product Features and Performance
High current handling up to 222A continuous drain current (at 25°C case temperature)
Ultra-low on-resistance of 2.3mΩ (maximum) at 100A and 10V gate-source voltage
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 11180pF (maximum) at 50V drain-source voltage
High gate-source voltage rating of ±20V
Product Advantages
Excellent efficiency and heat dissipation
Enables high-power, high-density power conversion designs
Robust and reliable performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2.3mΩ (maximum)
Continuous Drain Current (Id): 222A (at 25°C case temperature)
Input Capacitance (Ciss): 11180pF (maximum)
Power Dissipation: 214W (at 25°C case temperature)
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for reliable thermal performance
Compatibility
Suitable for a wide range of power conversion, motor control, and industrial applications
Application Areas
High-power switching applications
Switch-mode power supplies
Motor drives
Inverters
Industrial automation and control systems
Product Lifecycle
Current product offering
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
Exceptional power handling and efficiency
Industry-leading low on-resistance for improved system performance
Wide operating temperature range for reliable operation in harsh environments
Robust and compact TO-220-3 package for easy integration
Proven reliability and quality from a trusted manufacturer
